TOUMI, S.; OUENNOUGHI, Z. Temperature-dependent analysis of charge carrier current in Al/SiO2/p-type Si MOS structures with TiN-induced traps via the Poole-Frenkel conduction mechanism using the vertical optimization method. BOHR Journal of Material Sciences and Engineering, [S. l.], v. 2, n. 1, p. 1–12, 2024. DOI: 10.54646/bjmse.2024.09. Disponível em: https://journals.bohrpub.com/index.php/bjmse/article/view/763. Acesso em: 22 nov. 2024.