Toumi S, Ouennoughi Z. Temperature-dependent analysis of charge carrier current in Al/SiO2/p-type Si MOS structures with TiN-induced traps via the Poole-Frenkel conduction mechanism using the vertical optimization method. BOHR Journal of Material Sciences and Engineering [Internet]. 2024 Oct. 25 [cited 2024 Nov. 22];2(1):1-12. Available from: https://journals.bohrpub.com/index.php/bjmse/article/view/763